IC Fabrication

The correct circuit representation of the structure shown in the figure is

There are two photolithography systems: one with light source of wavelength \lambda _{1} = 156 nm (System 1) and another with light source of wavelength \lambda _{2} = 325 nm (System 2). Both photolithography systems are otherwise identical. If the minimum feature sizes that can be realized using System1 and System2 are L_{min1} \; and \; L_{min2} respectively, the ratio L_{min1}/L_{min2} (correct to two decimal places) is__________.

Which one of the following processes is preferred to form the gate dielectric (SiO_{2}) of MOSFETs ?

In MOSFET fabrication, the channel length is defined during the process of

In CMOS technology, shallow P-well or N -well regions can be formed using

If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

Thin gate oxide in a CMOS process in preferably grown using

A silicon wafer has 100 nm of oxide on it and is furnace at a temperature above 1000^{\circ} C for further oxidation in dry oxygen. The oxidation rate

If P is Passivation, Q is n -well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n - well CMOS fabrication process, is