Question 1 |
The correct circuit representation of the structure shown in the figure is


A | |
B | |
C | |
D |
Question 1 Explanation:

Question 2 |
There are two photolithography systems: one with light source of wavelength \lambda _{1} = 156 nm
(System 1) and another with light source of wavelength \lambda _{2} = 325 nm (System 2). Both
photolithography systems are otherwise identical. If the minimum feature sizes that can be
realized using System1 and System2 are L_{min1} \; and \; L_{min2} respectively, the ratio L_{min1}/L_{min2} (correct to two decimal places) is__________.
0.5 | |
1 | |
1.5 | |
0.25 |
Question 2 Explanation:
\begin{aligned} L_{min}&\propto \lambda \\ \frac{L_{min1}}{L_{min2}}&=\frac{\lambda _1}{\lambda _2} \\ &= \frac{156nm}{325nm}=0.48 \end{aligned}
Question 3 |
Which one of the following processes is preferred to form the gate dielectric (SiO_{2}) of MOSFETs ?
Sputtering | |
Molecular beam epitaxy | |
Wet oxidation | |
Dry oxidation |
Question 3 Explanation:
Dry oxidation is preferred for gate oxides.
Question 4 |
In MOSFET fabrication, the channel length is defined during the process of
isolation oxide growth | |
channel stop implantation | |
poly-silicon gate patterning | |
lithography step leading to the contact pads |
Question 4 Explanation:
Channel length is defined during the poly-silicon
gate pattering.
Question 5 |
In CMOS technology, shallow P-well or N -well regions can be formed using
low pressure chemical vapour deposition | |
low energy sputtering | |
low temperature dry oxidation | |
low energy ion-implantation |
Question 5 Explanation:
Ion implanation/diffusion is used for well
implantation.
There are 5 questions to complete.